Oxford Instruments KK

Plasma-based atomic layer deposition and etch solutions for GaN device integration at high volume

Thursday, December 12 | 11:30 am - 11:50 am

Hall5 (East Hall5 Theater)

Free

Oxford Instruments atomic layer deposition and etch (ALD and ALE) solutions provide uniform, low damage, high-rate plasma processing of GaN HEMTs on up to 200 mm wafers, to enable the reliable manufacture of small, fast, efficient, next generation devices for power electronics and RF applications.