STS Advanced Materials/ Analysis Session
Crystal Growth Technology, Evaluation and Substrate Manufacturing of SiC Materials for Power Devices
Conference Tower 607 / Online (Zoom)
Fee (Exclusive of tax)
- Per Session : SEMI Members 10,000JPY / Non-Members 20,000JPY
- STS 1 Day Pass : SEMI Members 27,000JPY / Non-Members 54,000JPY
*Above fee includes "Download Presentation Materials" (some presentation materials might be written in Japanese)
*Please note that there are separate tickets for in-person and online participation.
In order to improve the efficiency of electric vehicles (EV) and renewable energy, the use of power devices made of silicon carbide (SiC) is expanding and attracting attention. This seminar focuses on the SiC materials that support the manufacturing of these SiC devices, and introduces everything from the crystal growth of SiC materials to substrate evaluation and manufacturing technologies.
< SEMI Technology Symposium (STS) >
This first technology seminar series in SEMICON Japan founded in 1982, now grown to the international tech symposium marks the 43rd this year. It has been developed as a place to discuss technology among engineers by picking-up the semiconductor technology trends and its issue and sharing the practical technologies to the industry. This symposium stimulates global business growth by involving a variety of different players and visitors.
This program is organized thanks to "SEMI Technology Steering Committee (STS)" formed by top engineers from industry-leading companies, universities, and research institutions.
Program Agenda
*Please note that the program may be subject to change.
Session Chairs: *In alphabetical order by company name
Suigen Kyoh (KIOXIA), Masanobu Sato (SCREEN Semiconductor Solutions)
150 mm diameter SiC substrates are currently commercially available for power device production, and 4H-SiC substrates in 200 mm diameter are ready for the market. This seminar is aimed at explaining the status and prospects of SiC substrate production, focusing on the technological issues for implementing reliable SiC power devices with reasonable costs.
SiC wafers contain numerous crystal defects that affect device performance and yield. Detecting, classifying, and mitigating defects that can be detrimental to devices is crucial for quality improvement. This presentation will provide an overview of SiC crystal evaluation techniques and introduce Lasertec’s efforts and case studies.
SiCOXS has developed 4H-SiC bonded substrates (SiCkrest) as a new substrate to replace 4H-SiC bulk single crystals. SiCkrest is an innovative product that can maximize the utilization efficiency of single crystals, and this paper introduces the features of the SiCkrest manufacturing technology and the benefits of applying it to SiC power devices.