STS Power Device Session
Growing Power Market and WBG Technology
Conference Tower 607 / Online (Zoom)
Fee (Exclusive of tax)
- Per Session : SEMI Members 10,000JPY / Non-Members 20,000JPY
- STS 1 Day Pass : SEMI Members 27,000JPY / Non-Members 54,000JPY
*Above fee includes "Download Presentation Materials" (some presentation materials might be written in Japanese)
*Please note that there are separate tickets for in-person and online participation.
An overview of the growing power device market and the cutting edge of WBG (SiC and GaN) device technologies will be presented in this session.
< SEMI Technology Symposium (STS) >
This first technology seminar series in SEMICON Japan founded in 1982, now grown to the international tech symposium marks the 43rd this year. It has been developed as a place to discuss technology among engineers by picking-up the semiconductor technology trends and its issue and sharing the practical technologies to the industry. This symposium stimulates global business growth by involving a variety of different players and visitors.
This program is organized thanks to "SEMI Technology Steering Committee (STS)" formed by top engineers from industry-leading companies, universities, and research institutions.
Program Agenda
*Please note that the program may be subject to change.
Session Chairs: *In alphabetical order by company name
Takashi Nakamura (Osaka University), Yasuhiro Morikawa (ULVAC)
In response to the growing demand for power semiconductors that contribute to reducing CO2 emissions, power semiconductor manufacturers around the world are actively investing in increasing production. In this presentation, I will introduce the market trends of power semiconductors, focusing on SiC and GaN, and the investment trends of each company.
Power devices using GaN, a wide-bandgap semiconductor, particularly high electron mobility transistors (HEMTs), have been under research since the 1990s. As a result of years of research, recent developments have led to the commercialization of these devices by various companies as high-speed, low-loss transistors that surpass Si-based power MOSFETs. Additionally, research on power integrated circuits leveraging the characteristics of lateral devices is progressing, with some products already being introduced. This presentation will cover the current status and challenges of GaN-HEMTs.
SiC power MOSFETs are highly expected to contribute to the realization of carbon-neutral society. In this presentation, the latest developments of SiC power MOSFETs, such as SBD embedded SiC MOSFETs and trench SiC MOSFETs, are shown. Future perspective of their application to power electronics systems will also be presented.